| dc.creator | Davis, J. A. | |
| dc.creator | Loeb, H. W. | |
| dc.date | 2015-08-27T15:21:59Z | |
| dc.date | 2015-08-27T15:21:59Z | |
| dc.date | 1965-11 | |
| dc.date.accessioned | 2022-05-09T09:54:53Z | |
| dc.date.available | 2022-05-09T09:54:53Z | |
| dc.identifier | http://dspace.lib.cranfield.ac.uk/handle/1826/9356 | |
| dc.identifier.uri | https://reports.aerade.cranfield.ac.uk/handle/1826.2/4199 | |
| dc.description | A general method for the solution of the nonlinear Shockley-Poisson differential equation which governs the potential distribution in non-degenerate semiconductor systems is described which can be applied to the evaluation of depletion layer widths, carrier densities and capacitance bias relationships of p-n junction structures. The method is based upon the use of a particular type of resistance network analogue and results obtained for several one and two dimensional configurations are discussed. | |
| dc.language | en | |
| dc.publisher | College of Aeronautics | |
| dc.relation | 85 | |
| dc.relation | COA/M-85 | |
| dc.title | C.V.D. annual report: November 1965 research project RU27-1 :an analogue method for the determination of potential distributions in semiconductor systems | |
| dc.type | Report |
| Files | Size | Format | View |
|---|---|---|---|
| COA_Memo_85_November_1965.pdf | 4.617Mb | application/pdf |
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