| dc.creator | Loeb, H. W. | |
| dc.date | 2016-10-20T13:27:37Z | |
| dc.date | 2016-10-20T13:27:37Z | |
| dc.date | 1964-09 | |
| dc.date.accessioned | 2022-05-09T09:55:08Z | |
| dc.date.available | 2022-05-09T09:55:08Z | |
| dc.identifier | http://dspace.lib.cranfield.ac.uk/handle/1826/10799 | |
| dc.identifier.uri | https://reports.aerade.cranfield.ac.uk/handle/1826.2/4313 | |
| dc.description | 1. Introduction A basic problem in the design theory of semiconductor systems such as p-n junction devices relates to the determination of the spatial variation of electrostatic potential, 4, of electric field intensity, and of mobile carrier (hole, electron) concentrations, p and n ... [cont.]. | |
| dc.language | en | |
| dc.publisher | College of Aeronautics | |
| dc.relation | CoA/M/E&C-46 | |
| dc.relation | 46 | |
| dc.title | Resistance network simulation of semiconductor systems | |
| dc.type | Report |
| Files | Size | Format | View |
|---|---|---|---|
| COA_M_E+C_46_1964.pdf | 1.276Mb | application/pdf |
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