The PN junction as a variable reactance device for F. M. production

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dc.creator Brown, D. C.
dc.date 2017-04-26T09:24:18Z
dc.date 2017-04-26T09:24:18Z
dc.date 1957-11
dc.date.accessioned 2022-05-09T10:07:07Z
dc.date.available 2022-05-09T10:07:07Z
dc.identifier http://dspace.lib.cranfield.ac.uk/handle/1826/11822
dc.identifier.uri https://reports.aerade.cranfield.ac.uk/handle/1826.2/4447
dc.description A completely transistorized modulator has been developed for the production of frequency modulation of a 10Mc Is carrier. A frequency deviation of 100kc s is obtained by a change in the modulating signal of 0.15V and very good frequency modulation results with very little amplitude modulation.
dc.language en
dc.publisher College of Aeronautics
dc.relation CoA/N-76
dc.relation 76
dc.title The PN junction as a variable reactance device for F. M. production
dc.type Report


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